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technische information / technical information igbt-module igbt-modules FB15R06KL4 v orl?ufi g preliminar y elektrische eigenschaften / electrical properties h?chstzul?ssige werte / maximum rated values diode gleichrichter/ diode rectifier periodische rckw. spitzensperrspannung repetitive peak reverse voltage t vj =25c v rrm 800 v durchla?strom grenzeffektivwert pro chip rms forward current per chip t c =80c i frmsm 58 a gleichrichter ausgang grenzeffektivstrom maximum rms current at rectifier output t c =80c i rmsmax 96 a sto?strom grenzwert t p = 10 ms, t vj = 25c i fsm 448 a surge forward current t p = 10 ms, t vj = 150c 358 a grenzlastintegral t p = 10 ms, t vj = 25c i 2 t 1000 a 2 s i 2 t - value t p = 10 ms, t vj = 150c 642 a 2 s transistor wechselrichter/ transistor inverter kollektor-emitter-sperrspannung collector-emitter voltage t vj =25c v ces 600 v kollektor-dauergleichstrom t c = 65c i c,nom. 15 a dc-collector current t c = 25 c i c 19 a periodischer kollektor spitzenstrom repetitive peak collector current t p = 1 ms, t c =80c i crm 30 a gesamt-verlustleistung total power dissipation t c = 25c p tot 60 w gate-emitter-spitzenspannung gate-emitter peak voltage v ges +/- 20v v diode wechselrichter/ diode inverter dauergleichstrom dc forward current i f 15 a periodischer spitzenstrom repetitive peak forw. current t p = 1 ms i frm 30 a grenzlastintegral i 2 t - value v r = 0v, t p = 10ms, t vj = 125c i 2 t 25 a 2 s prepared by: thomas passe date of publication: 2002-02-13 approved by: ingo graf revision: 4 1(11)
technische information / technical information igbt-module igbt-modules FB15R06KL4 vorl?ufig preliminary modul isolation/ module isolation isolations-prfspannung insulation test voltage rms, f = 50 hz, t = 1 min. ntc connected to baseplate v isol 2,5 kv elektrische eigenschaften / electrical properties charakteristische werte / characteristic values diode gleichrichter/ diode rectifier min. typ. max. durchla?spannung forward voltage t vj = 150c, i f = 15 a v f - 0,8 - v schleusenspannung threshold voltage t vj = 150c v (to) - 0,61 - v ersatzwiderstand slope resistance t vj = 150c r t -11-m sperrstrom reverse current t vj = 150c, v r = 800 v i r -5-ma modul leitungswiderstand, anschlsse-chip lead resistance, terminals-chip t c = 25c r aa'+cc' - 4 - m transistor wechselrichter/ transistor inverter min. typ. max. kollektor-emitter s?ttigungsspannung v ge = 15v, t vj = 25c, i c = 15 a v ce sat - 1,95 2,55 v collector-emitter saturation voltage v ge = 15v, t vj = 125c, i c = 15 a - 2,2 - v gate-schwellenspannung gate threshold voltage v ce = v ge , t vj = 25c, i c = 0,4ma v ge(to) 4,5 5,5 6,5 v eingangskapazit?t input capacitance f = 1mhz, t vj = 25c v ce = 25 v, v ge = 0 v c ies - 0,8 - nf kollektor-emitter reststrom collector-emitter cut-off current gate-emitter reststrom gate-emitter leakage current v ce = 0v, v ge =20v, t vj =25c i ges - - 400 na einschaltverz?gerungszeit (ind. last) i c = i nenn , v cc = 300 v turn on delay time (inductive load) v ge = 15v, t vj = 25c, r g = 68 ohm t d,on -37-ns v ge = 15v, t vj = 125c, r g = 68 ohm - 34 - ns anstiegszeit (induktive last) i c = i nenn , v cc = 300 v rise time (inductive load) v ge = 15v, t vj = 25c, r g = 68 ohm t r -37-ns v ge = 15v, t vj = 125c, r g = 68 ohm - 37 - ns abschaltverz?gerungszeit (ind. last) i c = i nenn , v cc = 300 v turn off delay time (inductive load) v ge = 15v, t vj = 25c, r g = 68 ohm t d,off - 216 - ns v ge = 15v, t vj = 125c, r g = 68 ohm - 223 - ns fallzeit (induktive last) i c = i nenn , v cc = 300 v fall time (inductive load) v ge = 15v, t vj = 25c, r g = 68 ohm t f -17-ns v ge = 15v, t vj = 125c, r g = 68 ohm - 26 - ns einschaltverlustenergie pro puls i c = i nenn , v cc = 300 v turn-on energy loss per pulse v ge = 15v, t vj = 125c, r g = 68 ohm e on - 0,6 - mws l s = 80 nh abschaltverlustenergie pro puls i c = i nenn , v cc = 300 v turn-off energy loss per pulse v ge = 15v, t vj = 125c, r g = 68 ohm e off - 0,4 - mws l s = 80 nh kurzschlu?verhalten t p 10s, v ge 15v, r g = 68 ohm sc data t vj 125c, v cc = 360 v i sc -60- a -ma v ge = 0v, t vj =125c, v ce = 600v i ces - 5,0 2(11)
technische information / technical information igbt-module igbt-modules FB15R06KL4 vorl?ufig preliminary elektrische eigenschaften / electrical properties charakteristische werte / characteristic values min. typ. max. modulinduktivit?t stray inductance module l ce - - 40 nh modul leitungswiderstand, anschlsse-chip lead resistance, terminals-chip t c = 25c r cc'+ee' - 13 - m diode wechselrichter/ diode inverter min. typ. max. durchla?spannung v ge = 0v, t vj = 25c, i f = 15 a v f - 1,75 2,15 v forward voltage v ge = 0v, t vj = 125c, i f = 15 a - 1,8 - v rckstromspitze i f =i nenn , - di f /dt = 600 a/us peak reverse recovery current v ge = -10v, t vj = 25c, v r = 300 v i rm -13- a v ge = -10v, t vj = 125c, v r = 300 v - 14 - a sperrverz?gerungsladung i f =i nenn , - di f /dt = 600 a/us recovered charge v ge = -10v, t vj = 25c, v r = 300 v q r - 0,7 - as v ge = -10v, t vj = 125c, v r = 300 v - 1,2 - as abschaltenergie pro puls i f =i nenn , - di f /dt = 600 a/us reverse recovery energy v ge = -10v, t vj = 25c, v r = 300 v e rec - 0,14 - mws v ge = -10v, t vj = 125c, v r = 300 v - 0,24 - mws ntc-widerstand/ ntc-thermistor min. typ. max. nennwiderstand t c = 25c r 25 -5-k abweichung von r 100 deviation of r 100 t c = 100c, r 100 = 493 r/r -5 5 % verlustleistung power dissipation t c = 25c p 25 20 mw b-wert b-value r 2 = r 1 exp [b(1/t 2 - 1/t 1 )] b 25/50 3375 k 3(11)
technische information / technical information igbt-module igbt-modules FB15R06KL4 vorl?ufig preliminary thermische eigenschaften / thermal properties min. typ. max. innerer w?rmewiderstand gleichr. diode/ rectif. diode paste =1w/m*k r thjh - 1,1 - k/w thermal resistance, junction to heatsink trans. wechsr./ trans. inverter grease =1w/m*k - 2,4 - k/w diode wechsr./ diode inverter - 4,0 - k/w innerer w?rmewiderstand gleichr. diode/ rectif. diode r thjc - - 1 k/w thermal resistance, junction to case trans. wechsr./ trans. inverter - - 2 k/w diode wechsr./ diode inverter - - 2,9 k/w bergangs-w?rmewiderstand gleichr. diode/ rectif. diode paste =1w/m*k r thch - 0,2 - k/w thermal resistance, case to heatsink trans. wechsr./ trans. inverter grease =1w/m*k - 0,6 - k/w diode wechsr./ diode inverter - 1,4 - k/w h?chstzul?ssige sperrschichttemperatur maximum junction temperature t vj - - 150 c betriebstemperatur operation temperature t op -40 - 125 c lagertemperatur storage temperature t stg -40 - 125 c mechanische eigenschaften / mechanical properties innere isolation internal insulation al 2 o 3 cti comperative tracking index 225 anpre?kraft f. mech. befestigung pro feder f n mounting force per clamp gewicht weight g36g kriechstrecke creeping distance 13,5 mm luftstrecke clearance 12 mm kriechstrecke creeping distance 7,5 mm luftstrecke clearance 7,5 mm terminal - terminal terminal to terminal 40...80 kontakt - khlk?rper terminal to heatsink 4(11)
technische information / technical information igbt-module igbt-modules FB15R06KL4 vorl?ufig preliminary i c [a] v ce [v] i c [a] v ce [v] ausgangskennlinienfeld wechselr. (typisch) i c = f (v ce ) output characteristic inverter (typical) v ge = 15 v 0 5 10 15 20 25 30 0,00 0,50 1,00 1,50 2,00 2,50 3,00 3,50 4,00 4,50 5,00 tj = 25c tj = 125c 0 5 10 15 20 25 30 0,00 0,50 1,00 1,50 2,00 2,50 3,00 3,50 4,00 4,50 5,00 vge = 8v vge = 9v vge = 10v vge=12v vge=15v vge=20v ausgangskennlinienfeld wechselr. (typisch) i c = f (v ce ) output characteristic inverter (typical) t vj = 125c 5(11)
technische information / technical information igbt-module igbt-modules FB15R06KL4 vorl?ufig preliminary i c [a] v ge [v] i f [a] v f [v] durchla?kennlinie der freilaufdiode wechselr. (typisch) i f = f (v f ) forward characteristic of fwd inverter (typical) 0 5 10 15 20 25 30 5,00 6,00 7,00 8,00 9,00 10,00 11,00 12,00 13,00 tj = 25c tj = 125c bertragungscharakteristik wechselr. (typisch) i c = f (v ge ) transfer characteristic inverter (typical) v ce = 20 v 0 5 10 15 20 25 30 0,00 0,50 1,00 1,50 2,00 2,50 3,00 tj = 25c tj = 125c 6(11)
technische information / technical information igbt-module igbt-modules FB15R06KL4 vorl?ufig preliminary 300 v 68 ohm e [mws] i c [a] 300 v e [mws] r g [ ] schaltverluste wechselr. (typisch) e on = f (i c ), e off = f (i c ), e rec = f (i c ) v cc = switching losses inverter (typical) t j = 125c, v ge = 15 v, r gon = r goff = 0 0,5 1 1,5 2 2,5 3 60 80 100 120 140 160 180 200 220 eon eoff erec schaltverluste wechselr. (typisch) e on = f (r g ), e off = f (r g ), e rec = f (r g ) switching losses inverter (typical) t j = 125c, v ge = +-15 v , i c = i nenn , v cc = 0 0,5 1 1,5 2 2,5 3 0 5 10 15 20 25 30 eon eoff erec 7(11)
technische information / technical information igbt-module igbt-modules FB15R06KL4 vorl?ufig preliminary z thjh [k/w] t [s] 68 ohm i c [a] v ce [v] transienter w?rmewiderstand wechselr. z thjh = f (t) transient thermal impedance inverter 0,100 1,000 10,000 0,001 0,01 0,1 1 10 zth-igbt zth-fwd i 1 2 3 4 igbt: r i [k/w]: 156,8e-3 616,5e-3 784,7e-3 842e-3 i [s]: 3e-6 10,16e-3 78,72e-3 225,6e-3 fwd: r i [k/w]: 261,3e-3 1,31 1,03 1,4 i [s]: 3e-6 78,7e-3 10,2e-3 225,6e-3 sicherer arbeitsbereich wechselr. (rbsoa) i c = f (v ce ) reverse bias save operating area inverter (rbsoa) t vj = 125c, v ge = 15v, r g = 0 5 10 15 20 25 30 35 0 100 200 300 400 500 600 700 ic,modul ic,chip 8(11)
technische information / technical information igbt-module igbt-modules FB15R06KL4 vorl?ufig preliminary i f [a] v f [v] r[ ] t c [c] durchla?kennlinie der gleichrichterdiode (typisch) i f = f (v f ) forward characteristic of rectifier diode (typical) 0 5 10 15 20 25 30 0,00 0,20 0,40 0,60 0,80 1,00 1,20 tj = 25c tj = 150c ntc- temperaturkennlinie (typisch) r = f (t) ntc- temperature characteristic (typical) rtyp 100 1000 10000 100000 0 20 40 60 80 100 120 140 9(11)
technische information / technical information igbt-module igbt-modules FB15R06KL4 vorl?ufig preliminary schaltplan/ circuit diagram geh?useabmessungen/ package outlines bohrplan / drilling layout 10(11)
technische information / technical information igbt-module igbt-modules FB15R06KL4 geh?useabmessungen forts. / package outlines contd. mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. diese gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. this technical information specifies semiconductor devices but promises no characteristics. it is valid in combination with the belonging technical notes. 11(11)

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